The MIXA450PF1200TSF is a high power IGBT module featuring dual 450 A and 1.2 kV in phase leg topology designed for energy efficiency power conversion and motor control applications. It is available ...

CISSOID has expanded its standard power semiconductor portfolio with the launch of a new 1200V/300A half‑bridge ...

TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that beginning February 15 it will provide samples of its new LV100-type 1.2-kV IGBT module as an industrial-use ...

New power modules with solderable pin terminals have changed the structure of inverters in applications up to 20kW. The new EconoPACK+ package was designed to fill the gap between 20kW and 100kW ...

IXYS Corporation announced the introduction of a new range of IGBT modules for high power applications. The new IXYS SIMBUS F module is an industry standard outline optimized for IGBT phase leg ...

IRVINE, Calif., May 16, 2011 (GLOBE NEWSWIRE) -- Microsemi Corporation(Nasdaq:MSCC), a leading provider of semiconductor technology aimed at building a smart, secure, connected world, today announced ...

Amongst a flurry of announcements, On Semiconductor has introduced 1.2kV 25, 35, and 50A transfer-moulded IGBT power modules – in converter-inverter-brake (CIB) and converter-inverter (CI) ...

Previously, a Power Electronics Technology article titled “Inverted Acoustic System Cuts IGBT Failures” (September 2011) examined the use of an acoustic microscope to image heat-blocking defects such ...

Mitsubishi has announced its sixth-generation of IGBT modules for power converters. “The sixth-generation carrier-stored trench-gate bipolar transistor reduces collector-emitter saturation voltage by ...

ISELIN, NJ--(Marketwired - Aug 18, 2016) - TDK Corporation today announced a new EPCOS DC link capacitor that has been specifically designed for the HybridPACK™ 1-DC6 Insulated Gate Bipolar Transistor ...