The transition from finFET technology to Gate-All-Around (GAA) technology helps to reduce transistor variability and resume channel length scaling. It also brings several new challenges in terms of ...
When a CMOS circuit is in an idle state there is still some static power dissipation–a result of leakage current through nominally off transistors. Both nMOS and pMOS transistors used in CMOS logic ...
At the upcoming IEEE International Electron Devices Meeting (IEDM), Intel is expected to present papers on its efforts to develop gate-all-around transistors. One paper from Intel describes a more ...
Washington, D.C. — Intel Corp. faced off against the alliance of Advanced Micro Devices and IBM on the stage of the International Electron Devices Meeting here Tuesday (Dec. 6th), presenting 65-nm ...
(PhysOrg.com) -- Toshiba Corporation today announced that it has developed a breakthrough technology for steep channel impurity distribution that delivers a solution to a key problem for 20nm ...
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Intel looks beyond silicon, outlines breakthroughs in atomically-thin 2D transistors, chip packaging, and interconnects at IEDM 2024
Today, the Intel Foundry Technology Research team announced technology breakthroughs in 2D transistor technology using beyond ...
Analog circuit design using MOS transistors represents a dynamic and rapidly evolving field that is integral to modern electronics. Exploiting the inherent advantages of MOS technology—such as ...
Intel is in production with several 65-nm processors now, creating an inventory of commercial microprocessor products that will begin shipping early next year. At the IEDM conference, Intel showed die ...
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