This article is part of the TechXchange: Power Supply Design. To succeed in the world of power electronics, all it takes is a little silicon—literally. To prove it, power semiconductor companies are ...
The EPC2366 40 V eGaN® FET sets new benchmarks in performance, efficiency, and power density for next-generation power ...
KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has added DTMOSVI(HSD), power MOSFETs with high-speed diodes suitable for switching power supplies, ...
ROHM Co., Ltd. has developed the 100V power MOSFET--RS7P200BM--achieving industry-leading safe operating area (SOA) performance in a 5060-size (5.0mm x 6.0mm) package. This product is ideal for ...
IXYS announced the expansion of its high voltage power MOSFET product line, the 2000 V n-channel power MOSFET featuring 1 A current rating specifically designed for high voltage, high speed power ...
Alpha and Omega Semiconductor now offers five power MOSFETs in rugged LFPAK 5×6-mm surface-mount packages. The low-profile, flat power package minimizes vertical PCB space and performs reliably in ...
Although the development of power MOSFETs began with the V-MOS structure, the first commercially successful devices were based on the DMOS structure. In the DMOSFET structure, the MOS channel is ...
TOKYO--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched 650V super junction power MOSFETs, TK065U65Z, TK090U65Z, TK110U65Z, TK155U65Z and TK190U65Z, in its ...
The lineup consists of six models with on-resistance ranging from 13mΩ to 65mΩ. · GlobeNewswire Inc. Santa Clara, CA and Kyoto, Japan, Dec. 04, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today ...
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MOSFETs explained without the complexity
MOSFETs are tiny components that control power in everything from smartphones to electric vehicles. This video breaks down ...
Microchip Technology has announced the completion of its radiation-hardened power MOSFETs, achieving JANSF qualification for the JANSF2N8587U3 model, which can withstand up to 300 Krad (Si) Total ...
Over the years, low losses possible by high breakdown field made silicon carbide (SiC) MOSFETs extremely popular amongst engineers. At present, they are mostly used in areas where IGBTs (Insulated ...
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