Abstract: Silicon carbide (SiC) MOSFET featuring faster switching speed, higher breakdown voltage, and excellent thermal conductivity is widely used in power converters to improve their conversion ...
Abstract: Silicon carbide (SiC) power devices offer high switching speeds and power densities but are constrained by significant parasitic inductance and limited thermal dissipation capability.
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback